Modeling and experimental characterization of GeSn photodiodes for mid infrared - 2026_IDR_DEIB_42
Posted on: 04/06/2026
Deadline: 10/07/2026
Scientific-Disciplinary Group
09/IINF-01 - Electronics
Description
Modeling and simulations of GeSn APDs (avalanche photodiodes) with tin content beyond 12% for the mid-infrared. Experimental measurements of the performance of such photodiodes under different operating conditions (voltages, temperatures, etc.). The parameters to be measured include responsivity at different wavelengths (up to about 3.5 μm), noise, gain, bandwidth, etc. Following the simulations, the model should be improved to better reproduce the performance of these devices, with a view toward subsequent new fabrication.
Job posting website
Number of positions
1
Funding body
Politecnico di Milano
Selection process
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In order to participate in the selection, please read the call ("bando") available at the following website: https://www.polimi.it/en/bandi-incarichidiricerca
Relevance and pertinence of the publications, theses and scientific products attached to the research programme covered by the Fellowship (up to 40 points) Relevance and pertinence of previous research activities and work experience, if any, in relation to the research activity covered by the Fellowship (up to 30 points) Relevance and pertinence of their study programme to the research programme covered by the Fellowship (up to 30 points)
View the original posting on the MUR website: Go to MUR website