Development of memory devices with 2D semiconductors - 2026_IDR_DEIB_68

The research program aims at the development of memory devices with 2D semiconductors such as MoS2 and WS2 for application in stand-alone, embedded memories and neuromorphic computing circuits. The ultimate goal is the demonstration of a nonvolatile memory with high retention, cycling endurance and multilevel storage of information. The research activity consists of the device fabrication in the clean room, electrical characterization and development of accurate numerical models.

Selection process

In order to participate in the selection, please read the call ("bando") available at the following website: https://www.polimi.it/en/bandi-incarichidiricerca Relevance and pertinence of the publications, theses and scientific products attached to the research programme covered by the Fellowship (up to 30 points) Relevance and pertinence of previous research activities and work experience, if any, in relation to the research activity covered by the Fellowship (up to 50 points) Relevance and pertinence of their study programme to the research programme covered by the Fellowship (up to 20 points)

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